Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 72, Issue 8, 1998, Pages 921-923

  Beaumont, B ^a   Haffouz, S ^a   Gibart, P ^a  

^a CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001681080     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120874     Document Type: Article

References (8)

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7. B. Beaumont, M. Vaille, P. Lorenzini, P. Gibart, T. Boufaden, and B. el Jani, MRS Internet J. Nitride Semicond. Res. 1, 17 (1996).
8. S. Haffouz, B. Beaumont, M. Leroux, M. Laügt, P. Lorenzini, P. Gibart, and L. G. Hubert-Pfalzgraf, MRS Internet J. Nitride Semicond. Res. 2, 37 (1997).