Present status of InGaN/GaN/AlGaN-based laser diodes

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 820-825

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin Ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a   Kozaki, Tokuya ^a   Umemoto, Hitoshi ^a   Sano, Masahiko ^a   Chocho, Kazuyuki ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Blue laser diode; GaN; InGaN; Laterally overgrowth; Modulation doping; Superlattice

Indexed keywords

CONTINUOUS WAVE LASERS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

MODULATION DOPED STRAINED LAYER SUPERLATTICES (MD SLS);

QUANTUM WELL LASERS;

EID: 0032092588     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00302-9     Document Type: Article

References (14)

1. For a review, see S. Nakamura, G. Fasol, The Blue Laser Diode, 1st ed., Springer, Heidelberg, 1997.
2. K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi, M. Ishikawa, Jpn. J. Appl. Phys. 35 (1996) L1315.
3. K. Doverspike, G.E. Bulman, S.T. Sheppard, T.W. Weeks, M.T. Leonard, H.S. Kong, H. Kieringer, C.H. Carter, J. Edmond, J.D. Brown, J.T. Swindell, J.F. Schetzena, in: 39th Electronic Material Conference, 25-27 June 1997, CO, USA, Z-9.
4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku, Appl. Phys. Lett. 70 (1997) 1417.
5. S. Nakamura, MRS Int. J. Nitride Semicond. Res. 2 (1997) 5 (Available from http://nsr.mij.mrs.org/2/ 5/).
6. K. Ito, K. Hiramatsu, H. Amano, I. Akasaki, J. Crystal Growth 104 (1990) 533.
7. J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 27 (1974) 118.
8. Z. Sitar, M.J. Paisley, B. Yan, J. Ruan, W.J. Choyke, R.F. Davis, J. Vac. Sci. Technol. B 8 (1990) 316.
9. M.A. Khan, R.A. Skogman, J.M. Vanhove, Appl. Phys. Lett. 56 (1990) 1257.
10. A. Usui, H. Sunakawa, A. Sakai, A. Yamaguchi, Jpn. J. Appl. Phys. 36 (1997) L899.
11. O.H. Nam, M.D. Bremser, T. Zheleva, R.F. Davis, in: 39th Electronic Materials Conference, 25-27 June 1997, CO, USA, D-5.
12. Y. Kato, S. Kitamura, K. Hiramatsu, N. Sawaki, J. Crystal Growth 144 (1994) 133.
13. S.D. Lester, F.A. Ponce, M.G. Craford, D.A. Steigerwald, Appl. Phys. Lett. 66 (1995) 1249.
14. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 69 (1996) 4188.