Fabrication of GaN layer with low dislocation density using facet controlled ELO technique

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Miyake, H ^a   Mizutani, H ^a   Hiramatsu, K ^a   Iyechika, Y ^a   Honda, Y ^a   Maeda, T ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS;

DISLOCATION DENSITY; FACET CONTROLLED EPITAXIAL LATERAL OVERGROWTH; LOW PRESSURE METALORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035559584     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)