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Journal of Crystal Growth

Volumn 253, Issue 1-4, 2003, Pages 26-37

Using N2 as precursor gas in III-nitride CVD growth

(2) Danielsson, O a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

A1. Computer simulation; A1. Growth models; A3. Hot wall epitaxy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION;

REACTIVE SPECIES;

NITRIDES;

EID: 0038176846 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(03)00971-0 Document Type: Article

Times cited : (21)

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