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Volumn 54, Issue 3, 1996, Pages 1474-1477

Large atomic displacements associated with the nitrogen antisite in GaN

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EID: 0001747930     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.1474     Document Type: Article
Times cited : (82)

References (25)
  • 7
    • 26144450583 scopus 로고
    • We use the parametrization for LDA exchange-correlation term by J. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
    • (1981) Phys. Rev. B , vol.23 , pp. 5048
    • Perdew, J.1    Zunger, A.2
  • 13
    • 33646656867 scopus 로고
    • Our pseudopotentials are verified to be ghost-free using the method by X. Gonze, R. Stumpf and M. Scheffler, Phys. Rev. B 44, 8503 (1991).
    • (1991) Phys. Rev. B , vol.44 , pp. 8503
    • Gonze, X.1    Stumpf, R.2    Scheffler, M.3
  • 16
    • 0039263332 scopus 로고
    • However, a negative charge state of (Formula presented) in GaAs can be observed under application of hydrostatic pressure, which brings the unoccupied antisite level below the conduction band minimum, see, e.g., M. Baj et. al Phys. Rev. B 43, 2070 (1991).
    • (1991) Phys. Rev. B , vol.43 , pp. 2070
    • Baj, M.1
  • 17
    • 33744716978 scopus 로고
    • The theoretical lattice constant is used for all presented results
    • see, e.g., A. L. Wright and J. S. Nelson, Phys. Rev. B 50, 2159 (1994). The theoretical lattice constant is used for all presented results.
    • (1994) Phys. Rev. B , vol.50 , pp. 2159
    • Wright, A.1    Nelson, J.2
  • 24


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.