Influence of SiN buffer layer in GaN epilayers

Journal of Crystal Growth

Volumn 249, Issue 3-4, 2003, Pages 487-491

  Park, Seong Eun ^a   Lim, Sung Mook ^a   Lee, Cheul Ro ^b   Kim, Chang Soo ^c   Byungsung, O B ^a  

^a Chungnam National University   (South Korea)

^b Chonbuk National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

A1. Growth models; A1. Nucleation; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL PROPERTIES; POROSITY; SILICON NITRIDE; X RAY DIFFRACTION ANALYSIS;

GROWTH MODELS;

CRYSTAL GROWTH;

EID: 0037366574     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02357-6     Document Type: Article

References (10)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Sugimoto Y., Kiyoku H. Appl. Phys. Lett. 70:1997;1417.
2. Wuu D.-S., Horng R.-H., Tseng W.-H., Lin W.-T., Kung C.-Y. J. Crystal Growth. 220:2000;235.
3. Byun D., Kirn G., Lira D., Lee D., Choi I.-H., Park D., Kum D.-W. Thin Solid Films. 289:1996;256.
4. Uchida K., Nishida K., Kondo M., Munekata H. J. Crystal Growth. 189/190:1998;270.
5. Kachi T., Tomita K., Itoh K., Tadano H. Appl. Phys. Lett. 72:1998;704.
6. Wang T., Morishima Y., Naoi N., Sakai S. J. Crystal Growth. 213:2000;188.
7. Yuan H., Chen Z., Lu D.-C., Liu X., Han P., Wang X. J. Crystal Growth. 234:2002;115.
8. Sakai S., Wang T., Morishima Y., Naoi Y. J. Crystal Growth. 221:2000;334.
9. Elsner J., Jones R., Heggie M.I., Oberg S., Briddon P.R. Phys. Rev. B. 58:1998;12571.
10. Ponce F.A., Bour D.P., Gotz W., Wright P.J. Appl. Phys. Lett. 68:1996;57.