Control of strain in GaN by a combination of H2 and N2 carrier gases

Journal of Applied Physics

Volumn 89, Issue 12, 2001, Pages 7820-7824

  Yamaguchi, Shigeo ^a   Kariya, Michihiko ^a   Kosaki, Masayoshi ^a   Yukawa, Yohei ^a   Nitta, Shugo ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035875604     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1371278     Document Type: Article

References (10)

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5. The nucleation annealing effect is as follows. In general, GaN is grown using a low-temperature deposited buffer layer of AIN or GaN. The buffer layer acts as a nucleation for the subsequent GaN growth. After deposition of such buffer layer, substrate temperature is ramped to about 1000°C. During such procedure, nuclei coalesce with each other, and the way they do so may differ in different carrier gases.
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