New method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 334-337

  Sakai, S ^a   Wang, T ^a   Morishima, Y ^a   Naoi, Y ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034511241     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00709-0     Document Type: Article

References (6)

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