Selective area growth of GaN on Si substrate using SiO2 mask by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 8 SUPPL. B, 1998, Pages

  Kawaguchi, Yasutoshi ^a   Honda, Yoshio ^a   Matsushima, Hidetada ^a   Yamaguchi, Masahito ^a   Hiramatsu, Kazumasa ^b   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

Cold cathode; Epitaxial lateral overgrowth (ELO); GaN; Selective area growth (SAG); Si substrate; Submicron dot

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES;

EPITAXIAL LATERAL OVERGROWTH; GALLIUM NITRIDE; SELECTIVE AREA GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032131035     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l966     Document Type: Article

References (9)

1. M. C. Benjamin, C. Wang, R. F. Davis and R. J. Nemanich: Appl. Phys. Lett. 64 (1994) 3288.
2. J. L. Shaw, H. F. Gray, K. L. Jensen and T. M. Jung: J. Vac. Sci.& Technol. B14 (1996) 2072.
3. S. Kitamura, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 34 (1995) L1184.
4. R. D. Underwood, D. Kapolnek, B. P. Keller, S. Keller, S. P. Denbaars and U. K. Mishra: Solid-State Electron. 41 (1997) 243.
5. O. -H. Nam, M. D. Bremser, B. L. Ward, R. J. Nemanich and R. F. Davis: Jpn. J. Appl. Phys. 36 (1997) L532.
6. T. Takeuchi, H. Amano, K. Hiramatsu, N. Sawaki and I. Akasaki: J. Cryst. Growth 115 (1991) 634.
7. A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu and I. Akasaki: J. Cryst. Growth 128 (1993) 391.
8. N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W. -J. Choi, A. E. Bond, X. Zhang and D. H. Rich: Appl. Phys. Lett 71 (1997) 3569.
9. H. Matsushima, M. Yamaguchi, K. Hiramatsu and N. Sawaki: to be published in J. Cryst. Growth.