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Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1362-1364

Deep levels in the upper band-gap region of lightly Mg-doped GaN

(5) Hacke, P a Nakayama, H a Detchprohm, T a Hiramatsu, K a Sawaki, N a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CALCULATIONS; CAPACITANCE MEASUREMENT; COMPOSITION EFFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING;

CAPTURE PROCESS; CARRIER TRAPS; CYCLOPENTADIENYL MAGNESIUM; DEEP LEVEL STRUCTURE; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030568373 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.116080 Document Type: Article

Times cited : (119)

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