Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source

Applied Physics Letters

Volumn 68, Issue 25, 1996, Pages 3617-3619

  Sato, Hitoshi ^a   Takahashi, Hirokazu ^a   Watanabe, Atsushi ^a   Ota, Hiroyuki ^a  

^a PIONEER CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001196636     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115748     Document Type: Article

References (11)

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