Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Gehrke, T ^a   Linthicum, K J ^a   Thomson, D B ^a   Rajagopal, P ^a   Batchelor, A D ^b   Davis, R F ^a  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

BUFFER LAYERS; GROWTH MASK; PENDEO-EPITAXY; THIN FILM STRUCTURES;

HETEROJUNCTIONS;

EID: 3442886042     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002337     Document Type: Conference Paper

References (5)

1. K. J. Linthicum, T. Gehrke, D. B. Thomson, K. M. Tracy, E. P. Carlson, T. Smith, T. S. Zheleva, R. F. Davis, Mat. Res. Soc. Symp., this volume
2. D. B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, T. S. Zheleva, R. F. Davis, Mat. Res. Soc. Symp., this volume
3. T. S. Zheleva, D. B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, S. Smith, R. F. Davis, Mat. Res. Soc. Symp., this volume
4. K. J. Linthicum, T. Gehrke, D. B. Thomson, E. P. Carlson, P. Rajagopal, T. Smith, R. F. Davis, Appl. Phys. Lett., submitted Nov. 1998
5. T. S. Zheleva, D. B. Thomson, K. J. Linthicum, S. Smith, R. F. Davis, J. of Electr. Mat., submitted Nov. 1998