GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 919-921

  Tsukihara, M ^a   Naoi, Y ^a   Sakai, S ^a   Li, H D ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUALITY CONTROL; SAPPHIRE; THIN FILMS;

EPILAYERS;

GALLIUM NITRIDE;

EID: 0037428797     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544061     Document Type: Article

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