GaN substrates for molecular beam epitaxy growth of homoepitaxial structures

Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 281-289

  Grzegory, I ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Crystallization of GaN under high N2 pressure; Doping of GaN crystals; Molecular beam epitaxy growth of homoepitaxial GaN layers

Indexed keywords

EID: 0000478989     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00689-1     Document Type: Article

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