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Applied Physics Letters

Volumn 76, Issue 23, 2000, Pages 3421-3423

Characterization of threading dislocations in GaN epitaxial layers

(6) Hino, T a Tomiya, S a Miyajima, T a Yanashima, K a Hashimoto, S a Ikeda, M a

a SONY CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000515867 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.126666 Document Type: Article

Times cited : (409)

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