Influence of ambient gas on the epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 561-565

  Kawaguchi, Y ^a   Nambu, S ^a   Yamaguchi, M ^a   Sawaki, N ^a   Miyake, H ^b   Hiramatsu, K ^b   Tsukamoto, K ^c   Kuwano, N ^c   Oki, K ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTAL ORIENTATION; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTOR GROWTH;

EPITAXIAL LATERAL OVERGROWTH (ELO); GALLIUM NITRIDE; SELECTED AREA DIFFRACTION; SELECTIVE AREA GROWTH (SAG);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221960     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<561::AID-PSSA561>3.0.CO;2-M     Document Type: Article

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