Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: A route to produce self supported GaN substrates

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 97-102

  Beaumont, B ^a   Gibart, P ^a   Vaille, M ^a   Haffouz, S ^a   Nataf, G ^a   Bouille A ^a  

^a Centre de Recherches sur l'Hétéroepitaxie et Ses Applications   (France)

Author keywords

Growth anisotropy; HVPE; Lateral overgrowth; MOVPE; Selective epitaxy

Indexed keywords

COALESCENCE; DIELECTRIC FILMS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICON NITRIDE;

HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094494     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00180-8     Document Type: Article

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