-
3
-
-
85088190809
-
-
Beaumont B., Vaille M., Nataf G., Bouille A., Guillaume J.C., Vennegues P., Haffouz S., Gibart P. MRS Internet J. Nitride Semicond. Res. 3:1998;1.
-
(1998)
MRS Internet J. Nitride Semicond. Res.
, vol.3
, pp. 1
-
-
Beaumont, B.1
Vaille, M.2
Nataf, G.3
Bouille, A.4
Guillaume, J.C.5
Vennegues, P.6
Haffouz, S.7
Gibart, P.8
-
4
-
-
0000867356
-
-
Chichibu S.F., Marchand H., Minsky M.S., Keller S., Fini P.T., Ibbetson J.P., Fleischer S.B., Speck J.S., Bowers J.E., Hu E., Mishra U.K., Denbaars S.P., Deguchi T., Sota T., Nakamura S. Appl. Phys. Lett. 74:1999;1460.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1460
-
-
Chichibu, S.F.1
Marchand, H.2
Minsky, M.S.3
Keller, S.4
Fini, P.T.5
Ibbetson, J.P.6
Fleischer, S.B.7
Speck, J.S.8
Bowers, J.E.9
Hu, E.10
Mishra, U.K.11
Denbaars, S.P.12
Deguchi, T.13
Sota, T.14
Nakamura, S.15
-
5
-
-
0009489914
-
-
Coltrin M.E., Willan C.C., Bartram M.E., Han J., Missert N., Crawford M.H., Baca A.G. MRS Internet J. Nitride Semicond. Res. 4:1999;U602.
-
(1999)
MRS Internet J. Nitride Semicond. Res.
, vol.4
, pp. 602
-
-
Coltrin, M.E.1
Willan, C.C.2
Bartram, M.E.3
Han, J.4
Missert, N.5
Crawford, M.H.6
Baca, A.G.7
-
6
-
-
0033882278
-
-
Fini P., Marchand H., Ibbetson J.P., Denbaars S.P., Mishra U.K., Speck J.S. J. Crystal Growth. 209:1999;581.
-
(1999)
J. Crystal Growth
, vol.209
, pp. 581
-
-
Fini, P.1
Marchand, H.2
Ibbetson, J.P.3
Denbaars, S.P.4
Mishra, U.K.5
Speck, J.S.6
-
7
-
-
0032606657
-
-
Fini P., Zhao L., Moran B., Hansen M., Marchand H., Ibbetson J.P., Denbaars S.P., Mishra U.K., Speck J.S. Appl. Phys. Lett. 75:1999;1706.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1706
-
-
Fini, P.1
Zhao, L.2
Moran, B.3
Hansen, M.4
Marchand, H.5
Ibbetson, J.P.6
Denbaars, S.P.7
Mishra, U.K.8
Speck, J.S.9
-
9
-
-
0001551505
-
-
Kapolnek D., Keller S., Vetury R., Underwood R.D., Kozodoy P., DenBaars S.P., Mishra U.K. Appl. Phys. Lett. 71:1997;1204.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 1204
-
-
Kapolnek, D.1
Keller, S.2
Vetury, R.3
Underwood, R.D.4
Kozodoy, P.5
Denbaars, S.P.6
Mishra, U.K.7
-
11
-
-
0000185016
-
-
Li X., Jones A.M., Roh S.D., Turnbull D.A., Bishop S.G., Coleman J.J. J. Electron. Mater. 26:1997;306.
-
(1997)
J. Electron. Mater.
, vol.26
, pp. 306
-
-
Li, X.1
Jones, A.M.2
Roh, S.D.3
Turnbull, D.A.4
Bishop, S.G.5
Coleman, J.J.6
-
12
-
-
4243826883
-
-
Marchand H., Ibbetson J.P., Fini P.T., Wu X.H., Keller S., Denbaars S.P., Speck J.S., Mishra U.K. MRS Internet J. Nitride Semicond. Res. 4:1999;U462.
-
(1999)
MRS Internet J. Nitride Semicond. Res.
, vol.4
, pp. 462
-
-
Marchand, H.1
Ibbetson, J.P.2
Fini, P.T.3
Wu, X.H.4
Keller, S.5
Denbaars, S.P.6
Speck, J.S.7
Mishra, U.K.8
-
13
-
-
0032477148
-
-
Marchand H., Ibbetson J.P., Fini P.T., Wu X.H., Keller S., Denbaars S.P., Speck J.S., Mishra U.K. J. Crystal Growth. 195:1998;328.
-
(1998)
J. Crystal Growth
, vol.195
, pp. 328
-
-
Marchand, H.1
Ibbetson, J.P.2
Fini, P.T.3
Wu, X.H.4
Keller, S.5
Denbaars, S.P.6
Speck, J.S.7
Mishra, U.K.8
-
14
-
-
21944438486
-
-
Marchand H., Wu X.H., Ibbetson J.P., Fini P.T., Kozodoy P., Keller S., Speck J.S., Denbaars S.P., Mishra U.K. Appl. Phys. Lett. 73:1998;747.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 747
-
-
Marchand, H.1
Wu, X.H.2
Ibbetson, J.P.3
Fini, P.T.4
Kozodoy, P.5
Keller, S.6
Speck, J.S.7
Denbaars, S.P.8
Mishra, U.K.9
-
15
-
-
0042181198
-
-
Marx D., Kawa Z., Nakayama T., Mihashi Y., Takami T., Nunoshita M., Ozeki T. J. Crystal Growth. 189-190:1998;87.
-
(1998)
J. Crystal Growth
, vol.189-190
, pp. 87
-
-
Marx, D.1
Kawa, Z.2
Nakayama, T.3
Mihashi, Y.4
Takami, T.5
Nunoshita, M.6
Ozeki, T.7
-
19
-
-
0032614780
-
-
Rosner S.J., Girolami G., Marchand H., Fini P.T., Ibbetson J.P., Zhao L., Keller S., Mishra U.K., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 74:1999;2035.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2035
-
-
Rosner, S.J.1
Girolami, G.2
Marchand, H.3
Fini, P.T.4
Ibbetson, J.P.5
Zhao, L.6
Keller, S.7
Mishra, U.K.8
Denbaars, S.P.9
Speck, J.S.10
-
22
-
-
0001350656
-
-
Tanaka S., Kawaguchi Y., Sawaki N., Hibino M., Hiramatsu K. Appl. Phys. Lett. 76:2000;2701.
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 2701
-
-
Tanaka, S.1
Kawaguchi, Y.2
Sawaki, N.3
Hibino, M.4
Hiramatsu, K.5
-
23
-
-
0032131035
-
-
Kawaguchi Y., Honda Y., Matsushima H., Yamaguchi M., Hiramatsu K., Sawaki N. Jpn. J. Appl. Phys. 37:1998;L966.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 966
-
-
Kawaguchi, Y.1
Honda, Y.2
Matsushima, H.3
Yamaguchi, M.4
Hiramatsu, K.5
Sawaki, N.6
-
24
-
-
0033221997
-
-
Kawaguchi Y., Honda Y., Yamaguchi M., Sawaki N., Hiramatsu K. Physica Status Solidi A. 176:1999;553.
-
(1999)
Physica Status Solidi a
, vol.176
, pp. 553
-
-
Kawaguchi, Y.1
Honda, Y.2
Yamaguchi, M.3
Sawaki, N.4
Hiramatsu, K.5
-
25
-
-
0000321905
-
-
Ward B.L., Nam O.-H., Hartman J.D., English S.L., McCarson B.L., Schlesser R., Sitar Z., Davis R.F., Nemanich R.J. J. Appl. Phys. 84:1998;5238.
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 5238
-
-
Ward, B.L.1
Nam, O.-H.2
Hartman, J.D.3
English, S.L.4
McCarson, B.L.5
Schlesser, R.6
Sitar, Z.7
Davis, R.F.8
Nemanich, R.J.9
-
26
-
-
3442879636
-
-
Mao Z., McKernan S., Carter C.B., Yang W., McPherson a.S.A. MRS Internet J. Nitride Semicond. Res. 4:1999;U184.
-
(1999)
MRS Internet J. Nitride Semicond. Res.
, vol.4
, pp. 184
-
-
Mao, Z.1
McKernan, S.2
Carter, C.B.3
Yang, W.4
McPherson A., S.A.5
-
27
-
-
0033516412
-
-
Yang W., McPherson S.A., Mao Z., McKernan S., Carter C.B. J. Crystal Growth. 204:1999;270.
-
(1999)
J. Crystal Growth
, vol.204
, pp. 270
-
-
Yang, W.1
McPherson, S.A.2
Mao, Z.3
McKernan, S.4
Carter, C.B.5
-
33
-
-
0025720825
-
-
Colas E., Shahar A., Soole B.D., Tomlinson W.J., Hayes J.R., Caneau C., Bhat R. J. Crystal Growth. 107:1991;226.
-
(1991)
J. Crystal Growth
, vol.107
, pp. 226
-
-
Colas, E.1
Shahar, A.2
Soole, B.D.3
Tomlinson, W.J.4
Hayes, J.R.5
Caneau, C.6
Bhat, R.7
-
35
-
-
0037484515
-
-
Mishima Y., Kaida N., Sugiyama M., Sugiyama Y., Nakano Y. Electrochem. Soc. Proc. 98-23:1998;364.
-
(1998)
Electrochem. Soc. Proc.
, vol.9823
, pp. 364
-
-
Mishima, Y.1
Kaida, N.2
Sugiyama, M.3
Sugiyama, Y.4
Nakano, Y.5
-
40
-
-
0026944665
-
-
Caneau C., Bhat R., Frei M.R., Chang C.C., Deri R.J., Koza M.A. J. Crystal Growth. 124:1992;243.
-
(1992)
J. Crystal Growth
, vol.124
, pp. 243
-
-
Caneau, C.1
Bhat, R.2
Frei, M.R.3
Chang, C.C.4
Deri, R.J.5
Koza, M.A.6
-
41
-
-
0027906322
-
-
Caneau C., Bhat R., Chang C.C., Kash K., Koza M.A. J. Crystal Growth. 132:1993;364.
-
(1993)
J. Crystal Growth
, vol.132
, pp. 364
-
-
Caneau, C.1
Bhat, R.2
Chang, C.C.3
Kash, K.4
Koza, M.A.5
-
43
-
-
51249165819
-
-
Jones A.M., Osowski M.L., Lammert R.M., Dantzig J.A., Coleman J.J.J. J. Electron. Mater. 24:1995;1631.
-
(1995)
J. Electron. Mater.
, vol.24
, pp. 1631
-
-
Jones, A.M.1
Osowski, M.L.2
Lammert, R.M.3
Dantzig, J.A.4
Coleman, J.J.J.5
-
44
-
-
0008448979
-
-
Kluender J.F., Jones A.M., Lammert R.M., Baker J.E., Coleman J.J. J. Electron. Mater. 25:1996;1514.
-
(1996)
J. Electron. Mater.
, vol.25
, pp. 1514
-
-
Kluender, J.F.1
Jones, A.M.2
Lammert, R.M.3
Baker, J.E.4
Coleman, J.J.5
-
46
-
-
0027701824
-
-
Thrush E.J., Stagg J.P., Gibbbon M.A., Mallard R.E., Hamilton B., Jowett J.M., Allen E.M. Mater. Sci. Eng. B21:1993;130.
-
(1993)
Mater. Sci. Eng.
, vol.21
, pp. 130
-
-
Thrush, E.J.1
Stagg, J.P.2
Gibbbon, M.A.3
Mallard, R.E.4
Hamilton, B.5
Jowett, J.M.6
Allen, E.M.7
-
50
-
-
0027617602
-
-
Gibbon M., Stagg J.P., Cureton C.G., Thrush E.J., Jones C.J., Mallard R.E., Pritchard R.E., Collis N., Chew A. Semiconduct. Sci. Tech. 8:1993;998.
-
(1993)
Semiconduct. Sci. Tech.
, vol.8
, pp. 998
-
-
Gibbon, M.1
Stagg, J.P.2
Cureton, C.G.3
Thrush, E.J.4
Jones, C.J.5
Mallard, R.E.6
Pritchard, R.E.7
Collis, N.8
Chew, A.9
-
53
-
-
0001904229
-
-
Han J., Ng T.-B., Biefeld R.M., Crawford M.H., Follstaedt D.M. Appl. Phys. Lett. 71:1997;3114.
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 3114
-
-
Han, J.1
Ng, T.-B.2
Biefeld, R.M.3
Crawford, M.H.4
Follstaedt, D.M.5
-
54
-
-
0029765309
-
-
Li X., Jones A.M., Roh S.D., Turnbull D.A., Reuter E.E., Gu S.Q., Bishop S.G., Coleman J.J. Mat. Res. Soc. Symp. Proc. 395:1996;943.
-
(1996)
Mat. Res. Soc. Symp. Proc.
, vol.395
, pp. 943
-
-
Li, X.1
Jones, A.M.2
Roh, S.D.3
Turnbull, D.A.4
Reuter, E.E.5
Gu, S.Q.6
Bishop, S.G.7
Coleman, J.J.8
-
55
-
-
0000298284
-
-
Wang J., Fareed R.S.Q., Hao M., Mahanty S., Tottori S., Ishikawa Y., Sugahara T., Morishima Y., Nishino K., Osinski M., Sakai S. J. of Appl. Phys. 85:1999;1895.
-
(1999)
J. of Appl. Phys.
, vol.85
, pp. 1895
-
-
Wang, J.1
Fareed, R.S.Q.2
Hao, M.3
Mahanty, S.4
Tottori, S.5
Ishikawa, Y.6
Sugahara, T.7
Morishima, Y.8
Nishino, K.9
Osinski, M.10
Sakai, S.11
-
56
-
-
0026414612
-
-
Takeuchi T., Amano H., Hiramatsu K., Sawaki N., Akasaki I. J. Crystal Growth. 115:1991;634.
-
(1991)
J. Crystal Growth
, vol.115
, pp. 634
-
-
Takeuchi, T.1
Amano, H.2
Hiramatsu, K.3
Sawaki, N.4
Akasaki, I.5
-
57
-
-
0027554254
-
-
Watanabe A., Takeuchi T., Hirosawa K., Amano H., Hiramatsu K., Akasaki I. J. Crystal Growth. 128:1993;391.
-
(1993)
J. Crystal Growth
, vol.128
, pp. 391
-
-
Watanabe, A.1
Takeuchi, T.2
Hirosawa, K.3
Amano, H.4
Hiramatsu, K.5
Akasaki, I.6
|