Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8441-8444

  Kim, Ki Soo ^a   Oh, Chang Seok ^a   Lee, Kang Jea ^a   Yang, Gye Mo ^a   Hong, Chang Hee ^a   Lim, Kee Young ^a   Lee, Hyung Jae ^a   Yoshikawa, Akihiko ^b  

^a Chonbuk National University   (South Korea)

^b CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; EPITAXIAL GROWTH; HALL EFFECT; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

ELECTRON HALL MOBILITY; EPILAYERS; FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032621583     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370625     Document Type: Article

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