Pendeoepitaxy of gallium nitride thin films

Applied Physics Letters

Volumn 75, Issue 2, 1999, Pages 196-198

  Linthicum, Kevin ^a   Gehrke, Thomas ^a   Thomson, Darren ^a   Carlson, Eric ^a   Rajagopal, Pradeep ^a   Smith, Tim ^a   Batchelor, Dale ^a   Davis, Robert ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); MASKS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON NITRIDE; THIN FILMS;

GALLIUM NITRIDE; PENDEOEPITAXY; SELECTIVE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0032620385     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124317     Document Type: Article

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