Study of high-quality GaN grown by OMVPE using an intermediate layer

Journal of Crystal Growth

Volumn 218, Issue 2, 2000, Pages 447-450

  Benamara, M ^a   Liliental Weber, Z ^a   Kellermann, S ^a   Swider, W ^a   Washburn, J ^a   Mazur, J ^a   Bourret Courchesne, E D ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; INTERFACES (MATERIALS);

LATERAL OVERGROWTH EPITAXY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0034276097     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00568-6     Document Type: Article

References (10)

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9. E.D. Bourret-Courchesne, S. Kellermann, M. Benamara, Z. Liliental-Weber, J. Washburn, K.M. Yu, J.C. Irvine, J. Grystal Growth, to be published.
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