Transmission electron microscopy investigation of dislocations in GaN layer grown by facet-controlled epitaxial lateral overgrowth

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 A, 2001, Pages

  Honda, Yoshiaki ^a   Iyechika, Yasushi ^a   Maeda, Takayoshi ^a   Miyake, Hideto ^b   Hiramatsu, Kazumasa ^b  

^a SUMITOMO CHEMICAL CO LTD   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

Facet controlled epitaxial lateral overgrowth (FACELO); GaN; Metalorganic vapor phase epitaxy (MOVPE); Transmission electron microscope (TEM)

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; FACET-CONTROLLED EPITAXIAL LATERAL OVERGROWTH (FACELO);

GALLIUM NITRIDE;

EID: 0035301948     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l309     Document Type: Article

References (7)