AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

Applied Physics Letters

Volumn 75, Issue 3, 1999, Pages 388-390

  Smart, J A ^a   Schremer, A T ^a   Weimann, N G ^a   Ambacher, O ^a   Eastman, L F ^a   Shealy, J R ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC INSULATING MATERIALS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE OPERATIONS; NUCLEATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0032620168     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124384     Document Type: Article

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