Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 134-140

  Davis, Robert F ^a   Gehrke, T ^a,b   Linthicum, K J ^b   Zheleva, T S ^a   Preble, E A ^a   Rajagopal, P ^b   Zorman, C A ^c   Mehregany, M ^c  

^a North Carolina State University   (United States)

^b NITRONEX CORPORATION   (United States)

^c Case Western Reserve University   (United States)

Author keywords

A1. Crystal morphology; A1. Defects; A1. Interfaces; A3. Pendeoepitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THIN FILMS;

PENDEO-EPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0035335106     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00836-3     Document Type: Conference Paper

References (19)