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Journal of Crystal Growth

Volumn 231, Issue 3, 2001, Pages 371-390

Modeling of threading dislocation reduction in growing GaN layers

(6) Mathis, S K a Romanov, A E b Chen, L F a Beltz, G E a Pompe, W c Speck, J S a

a University of California (United States)

b IOFFE INSTITUTE (Russian Federation)

c DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

A1. Line defects; A3. Hydride vapor phase epitaxy; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REDUCTION; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

THREADING DISLOCATION (TD) REDUCTION;

SEMICONDUCTING FILMS;

EID: 0035480371 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01468-3 Document Type: Conference Paper

Times cited : (173)

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