Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 76, Issue 16, 2000, Pages 2220-2222

  Wang, T ^a   Shirahama, T ^a   Sun, H B ^a   Wang, H X ^a   Bai, J ^a   Sakai, S ^a   Misawa, H ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001503872     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126302     Document Type: Article

References (14)

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