Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 5 A, 1997, Pages

  Nam, Ok Hyun ^a   Bremser, Michael D ^a   Ward, Brandon L ^a   Nemanich, Robert J ^a   Davis, Robert F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

FIELD EMISSION MEASUREMENTS; GALLIUM NITRIDE; HEXAGONAL PYRAMID ARRAYS;

SEMICONDUCTING FILMS;

EID: 0031142401     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l532     Document Type: Article

References (11)