Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 72, Issue 18, 1998, Pages 2247-2249

  Hansen, P J ^a   Strausser, Y E ^a   Erickson, A N ^a   Tarsa, E J ^b   Kozodoy, P ^b   Brazel, E G ^b   Ibbetson, J P ^b   Mishra, U ^b   Narayanamurti, V ^b   DenBaars, S P ^b   Speck, J S ^b  

^a Digital Instruments   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DISLOCATIONS (CRYSTALS); FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTICS; ELECTRON CONCENTRATION; SCANNING CAPACITANCE MICROSCOPY; THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0032069766     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121268     Document Type: Article

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