Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

Journal of Crystal Growth

Volumn 173, Issue 3-4, 1997, Pages 249-259

  Vennegues, P ^a   Beaumont, B ^a   Vaille, M ^a   Gibart, P ^a  

^a CRHEA CNRS   (France)

Author keywords

Dislocations; III V nitrides; Nanopipes; TEM

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; NITRIDES; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; STACKING FAULTS; THERMAL EXPANSION; VECTORS;

BUFFER LAYERS; BURGERS VECTOR; GALLIUM NITRIDE; NANOCAVITIES; NANOPIPES;

SEMICONDUCTING FILMS;

EID: 0031117377     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01050-0     Document Type: Article

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