Nucleation control in the growth of bulk GaN by sublimation method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 2 SUPPL. B, 1997, Pages

  Kurai, Satoshi ^a   Nishino, Katsushi ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Bulk; Density of nuclei; GaN; Nucleation control; Sublimation

Indexed keywords

CRYSTALLINE MATERIALS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICA; SUBLIMATION;

GROWTH NUCLEATION CONTROL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031073857     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.L184     Document Type: Article

References (9)

1. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353.
2. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) L1705.
3. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332.
4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L217.
5. Z. Liliental-Weber, C. Kisielowski, X. Liu, L. Schloss, E. R. Weber, M. Bockowski, J. Jun, I. Grzegory and S. Porowski: Top. Workshop on III-V Nitrides Abstr., Nagoya, 1995, G-8.
6. R. B. Zetterstorm: J. Mater. Sci. 5 (1970) 1102.
7. S. Kurai, Y. Naoi, T. Abe, S. Ohmi and S. Sakai: Jpn. J. Appl. Phys. 35 (1996) L77.
8. S. Kurai, T. Abe, Y. Naoi and S. Sakai: Jpn. J. Appl. Phys. 35 (1996) 1637.
9. T. Okada, S. Kurai, Y. Naoi, K. Nishino, F. Inoko and S. Sakai: Jpn. J. Appl. Phys. 35 (1996) L1318.