Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 328-332

  Marchand, H ^a   Ibbetson, J P ^a   Fini, P T ^a   Keller, S ^a   DenBaars, S P ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Gallium nitride; Lateral epitaxial overgrowth; MOVPE; Surface structure

Indexed keywords

CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES;

FILL FACTOR RATIO; LATERAL EPITAXIAL OVERGROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477148     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00591-0     Document Type: Article

References (12)

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9. Examples include: Y. Kato, S. Kitamura, K. Hiramatsu, N. Sawaki, J. Crystal Growth 144 (1994) 133; X.H. Wu, C.R. Elsass, A. Abare, M. Mack, S. Keller, P.M. Petroff, S.P. DenBaars, J.S. Speck, S.J. Rosner, Appl. Phys. Lett. 72 (1998) 692.
10. For a discussion in the GaAs case, see: H. Asai, J. Crystal Growth 80 (1987) 425.
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