Stress and defect control in GaN using low temperature interlayers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 SUPPL. B, 1998, Pages

  Amano, Hiroshi ^a   Iwaya, Motoaki ^a   Kashima, Takayuki ^a   Katsuragawa, Maki ^a   Akasaki, Isamu ^a   Han, Jung ^b   Hearne, Scan ^b   Floro, Jerry A ^b   Chason, Eric ^b   Figiel, Jeffrey ^b  

^a MEIJO UNIVERSITY   (Japan)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

GaN; Low temperature deposited layer; Strain; Stress

Indexed keywords

CRACK INITIATION; DEPOSITION; DISLOCATIONS (CRYSTALS); METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; STRESS ANALYSIS; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; INTERLAYERS;

SEMICONDUCTING FILMS;

EID: 0032297773     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1540     Document Type: Article

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