Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Applied Physics Letters

Volumn 71, Issue 17, 1997, Pages 2472-2474

  Zheleva, Tsvetanka S ^a   Nam, Ok Hyun ^a   Bremser, Michael D ^a   Davis, Robert F ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; SINGLE CRYSTALS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; GALLIUM NITRIDE; LATERAL EPITAXY; ORGANOMETALLIC VAPOR PHASE EPITAXY; SELECTIVE GROWTH;

DISLOCATIONS (CRYSTALS);

EID: 0031588273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120091     Document Type: Article

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