메뉴 건너뛰기




Volumn 71, Issue 17, 1997, Pages 2472-2474

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; SINGLE CRYSTALS; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031588273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120091     Document Type: Article
Times cited : (498)

References (13)
  • 2
    • 5944245302 scopus 로고    scopus 로고
    • Materials Research Society Symposium Proceedings, (unpublished)
    • F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar, editors, III-N Nitrides, Materials Research Society Symposium Proceedings, 1997 (unpublished), Vol. 449.
    • (1997) III-N Nitrides , vol.449
    • Ponce, F.A.1    Moustakas, T.D.2    Akasaki, I.3    Monemar, B.A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.