Growth, dielectric properties, and memory device applications of ZrO 2 thin films

Thin Solid Films

Volumn 531, Issue , 2013, Pages 1-20

  Panda, Debashis ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Bipolar RRAM; Dielectric constant; Flash memory; High k; MIM capacitor; MOS capacitor; Unipolar RRAM; Zirconium oxide

Indexed keywords

BIPOLAR RRAM; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DYNAMIC RANDOM ACCESS MEMORY; HIGH-K; MIM CAPACITORS; NONVOLATILE MEMORY DEVICES; RESISTIVE SWITCHING MEMORY; UNIPOLAR RRAM;

CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; GATE DIELECTRICS; GERMANIUM; METALS; MICROELECTRONICS; MIM DEVICES; MOS CAPACITORS; NANOCRYSTALS; NANOTECHNOLOGY; NONVOLATILE STORAGE; PERMITTIVITY; SEMICONDUCTOR DOPING; SILICON; THIN FILMS; VAPOR DEPOSITION; ZIRCONIA;

ZIRCONIUM ALLOYS;

EID: 84875428522     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.01.004     Document Type: Review

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