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Volumn 101, Issue 7, 2012, Pages

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeO x film

(7) Rahaman, S Z a Maikap, S a Chen, W S b Lee, H Y b Chen, F T b Kao, M J b Tsai, M J b

a CHANG GUNG UNIVERSITY (Taiwan)

b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CU IONS; GOOD DATA; HIGH RESISTANCE; HOLE INJECTION; MEMORY SIZE; POSITIVE CHARGES; RESISTIVE MEMORIES; RESISTIVE SWITCHING MEMORIES; SWITCHING MECHANISM;

TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON INJECTION;

EID: 84865417778 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4745783 Document Type: Article

Times cited : (58)

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