Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application

Applied Physics Letters

Volumn 82, Issue 17, 2003, Pages 2874-2876

  Lee, Sang Yun ^a   Kim, Hyoungsub ^a   McIntyre, Paul C ^a   Saraswat, Krishna C ^a   Byun, Jeong Soo ^b  

^a Stanford University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DEPOSITION; ELECTRODES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MIM DEVICES; TUNGSTEN; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD);

ZIRCONIA;

EID: 0037959796     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1569985     Document Type: Article

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