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Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53 Ga0.47 As by chemical beam deposition

(4) Engel Herbert, Roman a Hwang, Yoontae a Cagnon, Jol a Stemmer, Susanne a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; BEAM DEPOSITION; C-V CURVE; CAPACITANCE VOLTAGE; FLAT-BAND VOLTAGE; FREQUENCY DISPERSION; GROWTH CONDITIONS; INVERSION CAPACITANCE; METAL ELECTRODES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; TEMPERATURE DEPENDENT; ZIRCONIUM OXIDE FILMS;

CAPACITANCE; CHEMICAL MODIFICATION; ELECTRIC POTENTIAL; MOS CAPACITORS; PHASE INTERFACES; SEMICONDUCTOR GROWTH; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

OXIDE FILMS;

EID: 69049116282 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204465 Document Type: Article

Times cited : (44)

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