Memristive switching mechanism for metal/oxide/metal nanodevices

Nature Nanotechnology

Volumn 3, Issue 7, 2008, Pages 429-433

  Yang, J Joshua ^a   Pickett, Matthew D ^a   Li, Xuema ^a   Ohlberg, Douglas A A ^a   Stewart, Duncan R ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATION THEORY; ELECTRIC FIELDS; ELECTRODES; MEMRISTORS; NANOTECHNOLOGY; OXYGEN VACANCIES; SWITCHING; TITANIUM DIOXIDE;

CONDUCTING CHANNELS; ELECTRICAL SWITCHING; ELECTRON-ION DYNAMICS; EXPERIMENTAL EVIDENCE; FUNDAMENTAL SYMMETRIES; NON-VOLATILE MEMORY; PLATINUM ELECTRODES; SWITCHING MECHANISM;

ELECTRIC SWITCHES;

ION; METAL; OXIDE; OXYGEN; PLATINUM; TITANIUM DIOXIDE;

ARTICLE; COMPUTER; CONDUCTANCE; DYNAMICS; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON; ELECTRONICS; MEMORY RESISTOR; NANODEVICE; PRIORITY JOURNAL;

EID: 46749093701     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.160     Document Type: Article

References (37)

1. Vogel, E. M. Technology and metrology of new electronic materials and devices. Nature Nanotech. 2, 25-32 (2007).
2. 3 . Nature Mater. 5, 312-320 (2006).
3. Aono, M. et al. Quantized conductance atomic switch. Nature 433, 47-50 (2005).
4. Moore, G. E. Cramming more components onto integrated circuits. Electronics 38, 114-116 (1965).
5. Mead, C. Analog VLSI and Neural Systems (Addison-Wesley, Reading, MA, 1989).
6. Boahen, K. Neuromorphic microchips. Sci. Am. 292, 56-63 (2005).
7. Waser, R.&Aono, M.Nanoionics-based resistive switchingmemories. Nature Mater. 6, 833-840 (2007).
8. 3 single crystals. Appl. Phys. Lett. 78, 3738-3740 (2001).
9. Chopra,K. L.Avalanche-induced negative resistance in thin oxide films. J.Appl.Phys. 36, 184-187 (1965).
10. Simmons, J. G. & Verderber, R. R. New conduction and reversible memory phenomena in thin insulating films. Proc. R. Soc. Lond. A 301, 77-102 (1967).
11. Rozenberg, M. J., Inoue, I. H. & Sánchez, M. J. Nonvolatile memory with multilevel switching: a basic model. Phys. Rev. Lett. 92, 178302 (2004).
12. Chen, X., Wu, N., Strozier, J. & Ignatiev, A. Spatially extended nature of resistive switching in perovskite oxide thin films. Appl. Phys. Lett. 89, 063507 (2006).
13. Fors, R., Khartsev, S. I. & Grishin, A. M. Giant resistance switching in metal-insulator-manganite junctions: evidence for Mott transition. Phys. Rev. B 71, 045305 (2005).
14. 2 thin films. Appl. Phys. Lett. 86, 262907 (2005).
15. Liu, S. Q.,Wu, N. J. & Ignatiev, A. Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl. Phys. Lett. 76, 2749-2751 (2000).
16. Nian, Y. B., Strozier, J.,Wu, N. J., Chen, X. & Ignatiev, A. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev. Lett. 98, 146403 (2007).
17. Jeon, S. H., Park, B. H., Lee, J., Lee, B. & Han, S. First-principles modeling of resistance switching in perovskite oxide material. Appl. Phys. Lett. 89, 042904 (2006).
18. 2 crystals. Appl. Phys. Lett. 91, 112101 (2007).
19. 3 interface. Appl. Phys. Lett. 85, 4073-4075 (2004).
20. 3 interface. Appl. Phys. Lett. 89, 123502 (2006).
21. 3 interface. Appl. Phys. Lett. 83, 957-959 (2003).
22. 2 thin films. Appl. Phys. Lett. 91, 012907 (2007).
23. 3 . Appl. Phys. Lett. 86, 012107 (2005).
24. 2 films. Appl. Phys. Lett. 90, 113501 (2007).
25. x films for nonvolatile memory applications. Appl. Phys. Lett. 90, 122104 (2007).
26. Jung, G. Y. et al. Fabrication of a 34 x 34 crossbar structure at 50 nm half-pitch by UV-based nanoimprint lithography. Nano Lett. 4, 1225-1229 (2004).
27. Jung, G. Y. et al. Circuit fabrication at 17 nm half-pitch by nanoimprint lithography. Nano Lett. 6, 351-354 (2006).
28. 3 . Appl. Phys. Lett. 60, 1190-1192 (1992).
29. Knauth, P. & Tuller, H. L. Electrical and defect thermodynamic properties of nanocrystalline titanium dioxide. J. Appl. Phys. 85, 897-902 (1999).
30. Rhoderick, E. H. & Williams, R. H. Metal-Semiconductor Contacts, 2nd edn (Oxford Science Publications, Oxford 1988).
31. 2 ). Solid State Ionics 177, 229-236 (2006).
32. 2 thin films grown by atomic-layer deposition. J. Appl. Phys. 98, 033715 (2005).
33. Chua, L.O.Memristor - missing circuit element. IEEE Trans. Circuit Theory CT-18, 507-519 (1971).
34. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80-83 (2008).
35. Ohdomari, I. & Tu, K. N. Parallel silicide contacts. J. Appl. Phys. 51, 3735-3739 (1980).
36. Tung, R. T. Electron transport at metal-semiconductor interfaces: General theory. Phys. Rev. B 45, 13509-13523 (1992).
37. Talin, A. A., Williams, R. S., Morgan, B. A., Ring, K. M. & Kavanagh, K. L. Nanometer-resolved spatial variations in the Schottky barrier height of a Au/n-type GaAs diode. Phys. Rev. B 49, 16474-16479 (1994).