SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 81-84

Growth and characterization of zirconium oxide thin films on silicon substrate

(5) Kuei, P Y a Chou, J D a Huang, C T b Ko, H H b Su, S C c

a NATIONAL DEFENSE UNIVERSITY (Taiwan)

b NAN KAI UNIVERSITY OF TECHNOLOGY (Taiwan)

c AIR FORCE INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

A1. Thermal oxidation; B2. Dielectric constant; B2. Zirconium oxide; B3. MOS capacitors

Indexed keywords

B2. DIELECTRIC CONSTANT; B2. ZIRCONIUM OXIDE; B3. MOS CAPACITORS; DIELECTRIC CONSTANTS; DIELECTRIC STACK; EQUIVALENT OXIDE THICKNESS; HIGH QUALITY; LOW-LEAKAGE CURRENT; METAL LAYER; OXIDATION TEMPERATURE; POLYCRYSTALLINE STRUCTURE; SILICON SUBSTRATES; THERMAL OXIDATION; ZIRCONIUM OXIDE;

CAPACITORS; MOS CAPACITORS; OXIDATION; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; THIN FILMS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

OXIDE FILMS;

EID: 78651081147 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.162 Document Type: Article

Times cited : (10)

References (18)

1
- 0343168081
- L. Kang, B.H. Lee, W.J. Qi, Y.J. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J.C. Lee IEEE Electron Device Lett. 21 2000 181
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 181
- Kang, L.¹ Lee, B.H.² Qi, W.J.³ Jeon, Y.J.⁴ Nieh, R.⁵ Gopalan, S.⁶ Onishi, K.⁷ Lee, J.C.⁸

2
- 0000361018
- B.H. Lee, L. Kang, R. Nieh, W.J. Qi, and J.C. Lee Appl. Phys. Lett. 76 2000 1926
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1926
- Lee, B.H.¹ Kang, L.² Nieh, R.³ Qi, W.J.⁴ Lee, J.C.⁵

3
- 0000019304
- J.J. Chambers, and G.N. Parsons Appl. Phys. Lett. 77 2000 2385
- (2000) Appl. Phys. Lett. , vol.77 , pp. 2385
- Chambers, J.J.¹ Parsons, G.N.²

4
- 20644440412
- S. Zafar, A. Kumar, E. Gusev, and E. Cartier IEEE Trans. Device Mater. Reliab. 5 2005 45
- (2005) IEEE Trans. Device Mater. Reliab. , vol.5 , pp. 45
- Zafar, S.¹ Kumar, A.² Gusev, E.³ Cartier, E.⁴

5
- 0032266791
- San Francisco, CA
- H.F. Luan, B.Z. Wu, L.G. Kang, B.Y. Kim, R. Vrtis, D. Robert, D.L. Kwong, IEDM'98 Technical Digest, San Francisco, CA, 1998, pp. 609612.
- (1998) IEDM'98 Technical Digest , pp. 609-612
- Luan, H.F.¹ Wu, B.Z.² Kang, L.G.³ Kim, B.Y.⁴ Vrtis, R.⁵ Robert, D.⁶ Kwong, D.L.⁷

6
- 0036609395
- B.A. Orlowski, E. Guziewicz, N.E. Orlowska, A. Bukowski, and R.L. Johnson Surf. Sci. 507-510 2002 218
- (2002) Surf. Sci. , vol.507-510 , pp. 218
- Orlowski, B.A.¹ Guziewicz, E.² Orlowska, N.E.³ Bukowski, A.⁴ Johnson, R.L.⁵

7
- 22544464986
- H.H. Ko, L.B. Chang, M.J. Jeng, P.Y. Kuei, and K.Y. Horng Jpn. J. Appl. Phys. 44 2005 3205
- (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 3205
- Ko, H.H.¹ Chang, L.B.² Jeng, M.J.³ Kuei, P.Y.⁴ Horng, K.Y.⁵

8
- 0037422086
- C.W. Yang, Y.K. Fang, S.F. Chen, C.Y. Lin, M.F. Wang, Y.M. Lin, T.H. Hou, L.G. Yao, S.C. Chen, and M.S. Liang Electronics Letters 39 2003 421
- (2003) Electronics Letters , vol.39 , pp. 421
- Yang, C.W.¹ Fang, Y.K.² Chen, S.F.³ Lin, C.Y.⁴ Wang, M.F.⁵ Lin, Y.M.⁶ Hou, T.H.⁷ Yao, L.G.⁸ Chen, S.C.⁹ Liang, M.S.¹⁰

9
- 0036715043
- H.T. Lue, C.Y. Liu, and T.Y. Tseng IEEE Electron Device Lett. 23 2002 553
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 553
- Lue, H.T.¹ Liu, C.Y.² Tseng, T.Y.³

10
- 0033312228
- W.J. Qi, R. Nieh, B.H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, J.C. Lee, IEDM'99 Technical Digest, 1999, pp. 145148.
- (1999) IEDM'99 Technical Digest , pp. 145-148
- Qi, W.J.¹ Nieh, R.² Lee, B.H.³ Kang, L.⁴ Jeon, Y.⁵ Onishi, K.⁶ Ngai, T.⁷ Banerjee, S.⁸ Lee, J.C.⁹

11
- 34547885050
- L.Z. Hsieh, H.H. Ko, P.Y. Kuei, and C.Y. Lee Jpn. J. Appl. Phys. 45 2006 7680
- (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 7680
- Hsieh, L.Z.¹ Ko, H.H.² Kuei, P.Y.³ Lee, C.Y.⁴

12
- 0030291621
- K.J. Hubbard, and D.G. Schlom J. Mater. Res. 11 1996 2757
- (1996) J. Mater. Res. , vol.11 , pp. 2757
- Hubbard, K.J.¹ Schlom, D.G.²

13
- 0037175878
- K. Muraoka Appl. Phys. Lett. 81 2002 4171
- (2002) Appl. Phys. Lett. , vol.81 , pp. 4171
- Muraoka, K.¹

14
- 79956000795
- B.O. Cho, J. Wang, L. Sha, and J.P. Chang Appl. Phys. Lett. 80 2002 1052
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1052
- Cho, B.O.¹ Wang, J.² Sha, L.³ Chang, J.P.⁴

15
- 0001494942
- T. Ngai, W. Qi, R. Sharma, J. Fretwell, X. Chen, J. Lee, and S. Banerjee Appl. Phys. Lett. 76 2000 502
- (2000) Appl. Phys. Lett. , vol.76 , pp. 502
- Ngai, T.¹ Qi, W.² Sharma, R.³ Fretwell, J.⁴ Chen, X.⁵ Lee, J.⁶ Banerjee, S.⁷

16
- 0035498635
- E.P. Gusev, E. Cartier, D.A. Buchana, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic Microelectron. Eng. 59 2001 341
- (2001) Microelectron. Eng. , vol.59 , pp. 341
- Gusev, E.P.¹ Cartier, E.² Buchana, D.A.³ Gribelyuk, M.⁴ Copel, M.⁵ Okorn-Schmidt, H.⁶ D'Emic, C.⁷

17
- 27144463614
- L.Z. Hsieh, H.H. Ko, P.Y. Kuei, L.B. Chang, and M.J. Jeng J. Appl. Phys. 98 2005 076110
- (2005) J. Appl. Phys. , vol.98 , pp. 076110
- Hsieh, L.Z.¹ Ko, H.H.² Kuei, P.Y.³ Chang, L.B.⁴ Jeng, M.J.⁵

18
- 18644361821
- J.C. Wang, S.H. Chiao, C.L. Lee, T.F. Lei, Y.M. Lin, M.F. Wang, S.C. Chen, C.H. Yu, and M.S. Liang J. Appl. Phys. 92 2002 3936
- (2002) J. Appl. Phys. , vol.92 , pp. 3936
- Wang, J.C.¹ Chiao, S.H.² Lee, C.L.³ Lei, T.F.⁴ Lin, Y.M.⁵ Wang, M.F.⁶ Chen, S.C.⁷ Yu, C.H.⁸ Liang, M.S.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.