A phenomenological model for the reset mechanism of metal oxide RRAM

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1455-1457

  Yu, Shimeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

Ion migration; Joule heating; resistive switching; switching polarity

Indexed keywords

EXPERIMENTAL OBSERVATION; FAST SWITCHING; INTERFACE PROPERTY; INTERFACIAL BARRIERS; ION MIGRATION; METAL OXIDES; NUMERICAL SIMULATION; PHENOMENOLOGICAL MODELS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; SWITCHING BEHAVIORS; SWITCHING MODES; THERMAL DISSOLUTION;

COMPUTER SIMULATION; DISSOLUTION; HEATING; IONS; JOULE HEATING; METALLIC COMPOUNDS; OXYGEN; SWITCHING SYSTEMS;

SWITCHING;

EID: 78649444385     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2078794     Document Type: Article

References (16)

1. S. Yu, B. Lee, and H.-S. P. Wong, "Metal oxide resistive switching memory," in Functional Metal Oxide Nanostructures. Berlin, Germany: Springer-Verlag, 2011, to be published.
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Jul. 2009.
3. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, "Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM," in IEDM Tech. Dig., 2007, pp. 775-778.
4. B. Gao, S. Yu, N. Xu, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, "Oxide-based RRAM switching mechanism: A new ion-transport-recombination model," in IEDM Tech. Dig., 2008, pp. 1-4.
5. M.-J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S.-E. Ahn, K. H. Kim, C. B. Lee, C. J. Kim, I.-K. Yoo, D. H. Seo, X.-S. Li, J.-B. Park, J.-H. Lee, and Y. Park, "Electrical manipulation of nano-filaments in transition-metal oxides for resistance-based memory," Nano Lett., vol. 9, no. 4, pp. 1476-1481, Apr. 2009.
6. N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals. Oxford, U.K.: Dover, 1948.
7. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.
8. M. J. Rozenberg, M. J. Sánchez, R. Weht, C. Acha, F. Gomez-Marlasca, and P. Levy, "Mechanism for bipolar resistive switching in transition-metal oxides," Phys. Rev. B, Condens. Matter, vol. 81, no. 11, p. 115 101, Mar. 2010.
9. xO resistive switching memory based on a combined model," Appl. Phys. Lett., vol. 94, no. 5, p. 053 510, Feb. 2009.
10. Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, and Y. Tokura, "High speed unipolar switching resistance RAM (RRAM) technology," in IEDM Tech. Dig., 2006, pp. 1-4.
11. 2 film memory devices," IEEE Electron Device Lett., vol. 28, no. 5, pp. 366-368, May 2007.
12. Y.-M. Kim and J.-S. Lee, "Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices," J. Appl. Phys., vol. 104, no. 11, p. 114 115, Dec. 2008.
13. W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, and M.-J. Tsai, "Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications," Appl. Phys. Lett., vol. 92, no. 2, p. 022110, Jan. 2008.
14. 2 thin films with embedded Al layers," Electrochem. Solid-State Lett., vol. 13, no. 2, pp. H36-H38, 2010.
15. N. Xu, L. F. Liu, X. Sun, X. Y. Liu, D. D. Han, Y. Wang, R. Q. Han, J. F. Kang, and B. Yu, "Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories," Appl. Phys. Lett., vol. 92, no. 23, p. 232 112, Jun. 2008.
16. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity," in IEDM Tech. Dig., 2009, pp. 1-4.