High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2 /amorphous La-doped ZrO2 dielectric

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Wu, Yung Hsien ^a   Lin, Chia Chun ^a   Chen, Lun Lun ^a   Hu, Yao Chung ^a   Wu, Jia Rong ^a   Wu, Min Lin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE CHANGE; CAPACITANCE DENSITY; HIGH-CAPACITANCE DENSITY; LA-DOPED; LEAKAGE PATHS; METAL-INSULATOR-METAL CAPACITORS; MIM CAPACITORS; VOLTAGE COEFFICIENT OF CAPACITANCES;

CAPACITANCE; CAPACITORS; GERMANIUM; GRAIN BOUNDARIES; METAL INSULATOR BOUNDARIES; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; ZIRCONIUM ALLOYS;

MIM DEVICES;

EID: 78651335881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3535605     Document Type: Article

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