High-k gate oxide for silicon heterostructure MOSFET devices

Journal of Materials Science: Materials in Electronics

Volumn 17, Issue 9, 2006, Pages 689-710

  Ray, S K ^a   Mahapatra, R ^a,b   Maikap, S ^a,c  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; GATES (TRANSISTOR); HETEROJUNCTIONS; PERMITTIVITY; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

HETEROSTRUCTURE MOSFET DEVICES; HIGH PERMITTIVITY DIELECTRICS; HIGH-K GATE OXIDE; ULTRATHIN DIELECTRIC FILMS;

MOSFET DEVICES;

EID: 33749268352     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-0015-2     Document Type: Review

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