A New Post-Deposition Annealing Method Using Furnace M2O for the Reduction of Leakage Current of CVD TazO5 Storage Calpacitors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 687-690

  Sun, S C ^a,b   Chen, T F ^b  

^a Taiwan SemiconductorManufacturing Company   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HIGH-K DIELECTRIC; OXYGEN VACANCIES; RAPID THERMAL ANNEALING; TANTALUM OXIDES; CAPACITORS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; NITROGEN OXIDES; OXYGEN; TANTALUM COMPOUNDS; THIN FILMS;

% REDUCTIONS; ANNEALING METHODS; ANNEALING TECHNIQUES; ATOMIC OXYGEN; HIGHEST TEMPERATURE; LOW-LEAKAGE CURRENT; OXYGEN SPECIES; POST DEPOSITION ANNEALING; REDUCTION OF OXYGEN; TA2O5 THIN FILMS;

LEAKAGE CURRENTS; ANNEALING;

FURNACE ANNEALING; OXYGEN VACANCIES; RAPID THERMAL ANNEALING; TANTALUM OXIDE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

EID: 0030388097     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554074     Document Type: Conference Paper

References (5)

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