Effects of vanadium doping on resistive switching characteristics and mechanisms of SrZrO3-based memory films

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1801-1808

  Lin, Meng Han ^a   Wu, Ming Chi ^a   Lin, Chen Hsi ^b   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

Oxygen vacancies; resistive random access memory (RRAM); resistive switching (RS) mechanism; Srzro3 (SZO); vanadium doping

Indexed keywords

RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING (RS) MECHANISM; SRZRO; VANADIUM DOPING;

ELECTRIC PROPERTIES; LATTICE CONSTANTS; OXYGEN; RANDOM ACCESS STORAGE; RAPID SOLIDIFICATION; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; VACANCIES; VANADIUM; VANADIUM ALLOYS; VAPOR DEPOSITION; ZIRCONIUM;

OXYGEN VACANCIES;

EID: 77955175743     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2050837     Document Type: Article

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