Impact of TaO x nanolayer at the GeSe x/W interface on resistive switching memory performance and investigation of Cu nanofilament

Journal of Applied Physics

Volumn 111, Issue 6, 2012, Pages

  Rahaman, S Z ^a   Maikap, S ^a   Chen, W S ^b   Lee, H Y ^b   Chen, F T ^b   Tien, T C ^b   Tsai, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CU(1 1 1); CYLINDRICAL SHAPES; DATA RETENTION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; HIGH-RESISTANCE STATE; LOW POWER; LOW-RESISTANCE STATE; MEMORY SIZE; MEMORY STRUCTURE; NANO LAYERS; NONVOLATILE MEMORY DEVICES; PROGRAM/ERASE; RESISTANCE RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORIES; SET VOLTAGE; STRUCTURE DESIGN; SWITCHING CYCLES;

CRYSTALLINE MATERIALS; ELECTRON SPECTROSCOPY; EXTRAPOLATION; FAST FOURIER TRANSFORMS; NONVOLATILE STORAGE; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

SWITCHING SYSTEMS;

EID: 84859551254     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3696972     Document Type: Article

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