SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 516, Issue 23, 2008, Pages 8333-8336

Physical and electrical characterization of high-k ZrO2 metal-insulator-metal capacitor

(6) Kim, Joo Hyung a Ignatova, Velislava a Kücher, Peter a Heitmann, Johannes b Oberbeck, Lars b Schröder, Uwe b

a Fraunhofer Center Nanoelectronic Technologies (Germany)

b QIMONDA DRESDEN GMBH AND CO OHG (Germany)

Author keywords

Capacitor; High k; Impurities; Leakage current; Metal insulator metal (MIM)

Indexed keywords

ELECTRIC PROPERTIES;

CAPACITOR; DEPOSITION TEMPERATURE; ELECTRICAL CHARACTERIZATIONS; ELECTRICAL PROPERTIES; HIGH-K; IMPURITIES; LAYER THICKNESSES; LEAKAGE CURRENT; METAL-INSULATOR-METAL (MIM);

ZIRCONIUM ALLOYS;

EID: 50849113753 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2008.03.051 Document Type: Article

Times cited : (57)

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