Impact of process optimizations on the electrical performance of high-k layers deposited by aqueous chemical solution deposition

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Van Elshocht, S ^a,f   Hardy, A ^b,c   Adelmann, C ^a,f   Caymax, M ^a,f   Conard, T ^a   Franquet, A ^a   Richard, O ^a   Van Bael, M K ^b,d   Mullens, J ^b   De Gendt, S ^a,e,f  

^a IMEC   (Belgium)

^b HASSELT UNIVERSITY   (Belgium)

^c PHL University College   (Belgium)

^d HASSELT UNIVERSITY   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

^f ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITORS; CITRIC ACID; CMOS INTEGRATED CIRCUITS; DEPOSITION; PERMITTIVITY; ZIRCONIUM;

ELECTRICAL PERFORMANCE; MATERIAL SCREENING; PROCESS OPTIMIZATIONS;

DIELECTRIC MATERIALS;

EID: 40549133529     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2840628     Document Type: Article

References (24)

1. See, e.g., H. Tullo, Chem. Eng. News CENEAR 0009-2347, 85, 9 (2007).
2. International Technology Roadmap for Semiconductors, http://public.itrs. net
3. D. Neumayer and E. Cartier, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1382851, 90, 1801 (2001).
4. H.-Q Ling, A.-D. Li, D. Wu, Y.-F. Tang, Z. G. Liu, and N.-B. Ming, Mater. Chem. Phys. MCHPDR 0254-0584 10.1016/S0254-0584(02)00049-4, 75, 170 (2002).
5. M. Shoyama, A. Tsuzuki, K. Kato, and N. Murayama, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124422, 75, 561 (1999).
6. M. Miyake, X. J. Lou, M. Zhang, F. D. Morrison, T. J. Leedham, T. Tatsuta, O. Tsuji, and J. F. Scott, Integr. Ferroelectr. IFEREU 1058-4587 10.1080/10584580500414176, 74, 165 (2005).
7. F. D. Morrison, J. F. Scott, M. Alexe, T. J. Leedham, T. Tatsuta, and O. Tsuji, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(02)00970-X, 66, 591 (2003).
8. G. Freiman, P. Barboux, J. Perriere, and K. Giannakopoulos, Chem. Mater. CMATEX 0897-4756 10.1021/cm071255f, 19, 5862 (2007).
9. Y. Aoki and T. Kunitake, Adv. Mater. (Weinheim, Ger.) ADVMEW 0935-9648 10.1002/adma.200305731, 16, 118 (2004).
10. R. W. Schwartz, T. Schneller, and R. Waser, C. R. Chim. CRCOCR 1631-0748 10.1016/j.crci.2004.01.007, 7, 433 (2004).
11. A. Hardy, J. D'Haen, L. Goux, D. J. Wouters, M. Van Bael, H. Van den Rul, and J. Mullens, Chem. Mater. CMATEX 0897-4756 10.1021/cm070101x, 19, 2994 (2007).
12. S. Van Elshocht, A. Hardy, T. Witters, C. Adelmann, M. Caymax, T. Conard, S. De Gendt, A. Franquet, O. Richard, M. K. Van Bael, J. Mullens, and M. Heyns, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10.1149/1.2435509, 10, G15 (2007).
13. H. Fukumoto, M. Morita, and Y. Osaka, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.343155, 65, 5210 (1989).
14. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065, 89, 5243 (2001).
15. G. Scarel, S. Ferrari, S. Spiga, C. Wiemer, G. Tallarida, and M. Fanciulli, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1564032, 21, 1359 (2003).
16. J. C. Garcia, L. M. R. Scolfaro, A. T. Lino, V. N. Freire, G. A. Farias, C. C. Silva, H. W. Leite Alves, S. C. P. Rodrigues, and E. F. da Silva, Jr., J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2386967, 100, 104103 (2006).
17. M. K. Van Bael, D. Nelis, A. Hardy, D. Mondelaers, K. Van Werde, J. D'Haen, G. Vanhoyland, H. Van den Rul, J. Mullens, L. C. Van Poucke, F. Frederix, and D. J. Wouters, Integr. Ferroelectr. IFEREU 1058-4587 10.1080/10584580215353, 45, 113 (2002).
18. I. Truijen, M. K. Van Bael, H. Van den Rul, J. D'Haen, and J. Mullens, J. Sol-Gel Sci. Technol. JSGTEC 0928-0707 10.1007/s10971-006-0123-8, 41, 43 (2007).
19. A. Hardy, M. K. Van Bael, J. D'Haen, O. Douheret, M. D'Olieslager, J. Mullens, S. Van Elshocht, S. De Gendt, C. Adelmann, M. Caymax, T. Conard, T. Witters, H. Bender, O. Richard, and M. Heyns, J. Mater. Res. JMREEE 0884-2914 10.1557/jmr.2007.0433, 22, 3484 (2007).
20. E. Geuzens, G. Vanhoyland, J. D'Haen, M. K. Van Bael, H. Van den Rul, J. Mullens, and L. C. Van Poucke, Key Eng. Mater. KEMAEY 1013-9826, 343, 264 (2004).
21. K. Van Werde, G. Vanhoyland, D. Mondelaers, H. Van den Rul, M. Van Bael, J. Mullens, and L. Van Poucke, J. Mater. Sci. JMTSAS 0022-2461 10.1007/s10853-006-1154-9, 42, 624 (2007).
22. G. Scarel, S. Ferrari, S. Spiga, C. Wiemer, G. Tallarida, and M. Fanculli, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1564032, 21, 1359 (2003).
23. R. J. Carter, E. Cartier, A. Kerber, L. Pantisano, T. Schram, S. De Gendt, and M. Heyns, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1592639, 83, 533 (2003).
24. J. R. Hauser and K. Ahmed, AIP Conf. Proc. APCPCS 0094-243X, CP449 Characterization and Metrology for ULSI Technology, 239 (1998).