Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers

Thin Solid Films

Volumn 422, Issue 1-2, 2002, Pages 33-38

  Chatterjee, S ^a   Samanta, S K ^a   Banerjee, H D ^a   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Chemical vapor deposition; Silicon; Zirconium tetratert butoxide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; LOW TEMPERATURE EFFECTS; MOSFET DEVICES; SILICON COMPOUNDS;

TUNNELING CURRENT;

THIN FILMS;

EID: 0037147138     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00995-1     Document Type: Article

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