Nonpolar nonvolatile resistive switching in Cu doped ZrO2

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 434-437

  Guan, Weihua ^a   Long, Shibing ^a   Liu, Qi ^a   Liu, Ming ^a   Wang, Wei ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Cu doping; Nonvolatile memory (NVM); Resistive random access memory (ReRAM); Resistive switching; ZrO2

Indexed keywords

COPPER; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; RANDOM ACCESS STORAGE; SWITCHING; ZIRCONIUM COMPOUNDS;

NONPOLAR RESISTIVE SWITCHING; NONVOLATILE RESISTIVE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY (RERAM); VOLTAGE PULSE; VOLTAGE SWEEPING;

NONVOLATILE STORAGE;

EID: 43549104017     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919602     Document Type: Article

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