Reliability of Al2 O3-doped ZrO2 high-k dielectrics in three-dimensional stacked metal-insulator-metal capacitors

Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

  Zhou, Dayu ^a,f   Schroeder, U ^a   Xu, Jin ^b   Heitmann, J ^a   Jegert, G ^c   Weinreich, W ^b   Kerber, M ^d   Knebel, S ^a   Erben, E ^a   Mikolajick, T ^a,e  

^a NAMLAB GGMBH   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^d INFINEON TECHNOLOGIES AG   (Germany)

^e DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^f DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BREAKDOWN BEHAVIOR; BREAKDOWN FIELD; COMPOSITIONAL MODIFICATION; CONDUCTION MECHANISM; DIELECTRIC CONSTANTS; DIELECTRIC THIN FILMS; FIELD ACCELERATION; HIGH-K DIELECTRIC; METAL-INSULATOR-METAL CAPACITORS; MOLECULAR BONDS; RELIABILITY EVALUATION;

ATOMIC LAYER DEPOSITION; CAPACITORS; DEFECT DENSITY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; METAL INSULATOR BOUNDARIES; MIM DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; ZIRCONIUM ALLOYS;

METALS;

EID: 78650906750     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3520666     Document Type: Article

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